Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
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| dc.contributor.author | Nyamhere, Cloud
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| dc.contributor.author | Deenapanray, P.N.K.
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| dc.contributor.author | Auret, Francois Danie
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| dc.contributor.author | Farlow, F.C.
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| dc.date.accessioned | 2007-05-10T06:05:39Z | |
| dc.date.available | 2007-05-10T06:05:39Z | |
| dc.date.issued | 2006 | |
| dc.description.abstract | We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated. | en |
| dc.description.sponsorship | The authors acknowledge the financial support of the Australian Research Council and South African National Research Foundation for financial assistance. The Laplace DLTS system software and hardware used in the research have been received from L. Dobaczewski (Institute of Physics Polish Academy of Sciences) and A. R. Peaker (Centre for Electronic Materials Devices and Nanostructures, University of Manchester). | en |
| dc.format.extent | 121686 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Nyamhere, C, Deenapanray, PNK, Auret, FD & Farlow, FC 2006. ‘Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS’, Physica B: Condensed Matter, vols. 376-377, pp. 161-164 [http://www.sciencedirect.com/science/journal/09214526 ] | en |
| dc.identifier.issn | 0921-4526 | |
| dc.identifier.other | 10.1016/j.physb.2005.12.043 | |
| dc.identifier.uri | http://hdl.handle.net/2263/2342 | |
| dc.language.iso | en | en |
| dc.publisher | Elsevier | en |
| dc.rights | Elsevier | en |
| dc.subject | Gallium doping | en |
| dc.subject | Czochralski Si | en |
| dc.subject | Defects | en |
| dc.subject | Laplace DLTS | en |
| dc.subject.lcsh | Gallium | |
| dc.title | Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS | en |
| dc.type | Postprint Article | en |
