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dc.contributor.author | Golovins, Eugene![]() |
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dc.contributor.author | Sinha, Saurabh![]() |
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dc.date.accessioned | 2013-04-17T14:02:43Z | |
dc.date.available | 2013-04-17T14:02:43Z | |
dc.date.issued | 2013-02 | |
dc.description.abstract | Embedded temperature sensors based on proportional-to-the-absolute-temperature (PTAT) current sources have the potential to lay the foundation for low-cost temperature-aware integrated circuit architectures if they meet the requirements of miniaturization, fabrication process match, and precise estimation in a wide range of temperatures. This paper addresses an analytical approach to the minimum-element PTAT circuit design capitalizing on the physics-based modeling of the heterojunction bipolar transistor (HBT) structures. It is shown that a PTAT circuit can be implemented on only two core HBT elements with good accuracy. Derived parametric relations allow a straightforward specification of the thermal gain at the design stage, which affects sensor sensitivity. Further derived current-to-temperature mapping expresses a temperature estimate based on the measured PTAT output current. Numerical examples indicate attainable estimation accuracy of 0.43% in case of a measurement instance taken in the absence of measurement noise. | en |
dc.description.librarian | hb2013 | en |
dc.description.librarian | ai2013 | en |
dc.description.sponsorship | The National Research Foundation of South Africa under Grant UID:74041 | en |
dc.description.uri | http://ieeexplore.ieee.org/ | en |
dc.identifier.citation | Golovins, E & Sinha, S 2013, 'Analytical approach to design of proportional-to-the-absolute-temperature current sources and temperature sensors based on heterojunction bipolar transistors', IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 3, no. 2, pp. 262-274. | en |
dc.identifier.issn | 2156-3985 (online) | |
dc.identifier.issn | 2156-3950 (print) | |
dc.identifier.other | 10.1109/TCPMT.2012.2226886 | |
dc.identifier.uri | http://hdl.handle.net/2263/21300 | |
dc.language.iso | en | en |
dc.publisher | Institute of Electrical and Electronics Engineers | en |
dc.rights | © 2012 IEEE | en |
dc.subject | (BiCMOS) integrated circuits | en |
dc.subject | Bi-complementary metal–oxide | en |
dc.subject | Heterojunction bipolar transistor (HBT) | en |
dc.subject.lcsh | Heterojunctions | en |
dc.subject.lcsh | Temperature measurements | en |
dc.subject.lcsh | Bipolar integrated circuits -- Thermal properties | en |
dc.subject.lcsh | Detectors | en |
dc.subject.lcsh | Metal oxide semiconductors, Complementary | en |
dc.subject.lcsh | Bipolar transistors | en |
dc.title | Analytical approach to design of proportional-to-the-absolute-temperature current sources and temperature sensors based on heterojunction bipolar transistors | en |
dc.type | Postprint Article | en |