Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

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dc.contributor.author Chawanda, Albert
dc.contributor.author Mtangi, Wilbert
dc.contributor.author Auret, Francois Danie
dc.contributor.author Nel, Jacqueline Margot
dc.contributor.author Nyamhere, Cloud
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.date.accessioned 2012-06-12T06:10:18Z
dc.date.available 2012-06-12T06:10:18Z
dc.date.issued 2012-05
dc.description.abstract The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ( ɸʙ) increases with the increasing temperature. The I-V characteristics are analysed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights ɸʙ vs. ½ kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of ɸʙ = 0.615 eV and standard deviation σs0 = 0.00858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm-2 K-2 and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm-2 K-2. This may be due to greater inhomogeneities at the interface. en
dc.description.librarian nf2012 en
dc.description.sponsorship The South African National Research Foundation en_US
dc.description.uri http://www.elsevier.com/locate/physb en_US
dc.identifier.citation Albert Chawanda, Wilbert Mtangi, Francois D. Auret, Jacqueline Nel, Cloud Nyamhere & Mmantsae Diale, Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes, Physica B, Vol. 407, no. 10, pp. 1574-1577 (2012), doi: 10.1016/j.physb.2011.09.089 en
dc.identifier.issn 0921-4526 (print)
dc.identifier.issn 1873-2135 (online)
dc.identifier.other 10.1016/j.physb.2011.09.089
dc.identifier.uri http://hdl.handle.net/2263/19145
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights © 2011 Elsevier B.V. All rights reserved. en_US
dc.subject Schottky contacts en
dc.subject Current–voltage–temperature en
dc.subject Schottky barrierheight en
dc.subject Schottky diodes en
dc.subject.lcsh Gaussian distribution en
dc.subject.lcsh Inhomogeneous materials en
dc.title Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes en
dc.type Postprint Article en


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