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dc.contributor.author | Chawanda, Albert![]() |
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dc.contributor.author | Mtangi, Wilbert![]() |
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dc.contributor.author | Auret, Francois Danie![]() |
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dc.contributor.author | Nel, Jacqueline Margot![]() |
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dc.contributor.author | Nyamhere, Cloud![]() |
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dc.contributor.author | Diale, M. (Mmantsae Moche)![]() |
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dc.date.accessioned | 2012-06-12T06:10:18Z | |
dc.date.available | 2012-06-12T06:10:18Z | |
dc.date.issued | 2012-05 | |
dc.description.abstract | The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ( ɸʙ) increases with the increasing temperature. The I-V characteristics are analysed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights ɸʙ vs. ½ kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of ɸʙ = 0.615 eV and standard deviation σs0 = 0.00858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm-2 K-2 and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm-2 K-2. This may be due to greater inhomogeneities at the interface. | en |
dc.description.librarian | nf2012 | en |
dc.description.sponsorship | The South African National Research Foundation | en_US |
dc.description.uri | http://www.elsevier.com/locate/physb | en_US |
dc.identifier.citation | Albert Chawanda, Wilbert Mtangi, Francois D. Auret, Jacqueline Nel, Cloud Nyamhere & Mmantsae Diale, Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes, Physica B, Vol. 407, no. 10, pp. 1574-1577 (2012), doi: 10.1016/j.physb.2011.09.089 | en |
dc.identifier.issn | 0921-4526 (print) | |
dc.identifier.issn | 1873-2135 (online) | |
dc.identifier.other | 10.1016/j.physb.2011.09.089 | |
dc.identifier.uri | http://hdl.handle.net/2263/19145 | |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | © 2011 Elsevier B.V. All rights reserved. | en_US |
dc.subject | Schottky contacts | en |
dc.subject | Current–voltage–temperature | en |
dc.subject | Schottky barrierheight | en |
dc.subject | Schottky diodes | en |
dc.subject.lcsh | Gaussian distribution | en |
dc.subject.lcsh | Inhomogeneous materials | en |
dc.title | Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes | en |
dc.type | Postprint Article | en |