Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures

Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Van Schalkwyk, Louwrens

dc.contributor.author	Ngoepe, Phuti Ngako Mahloka
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Van Schalkwyk, Louwrens
dc.date.accessioned	2012-06-12T06:09:34Z
dc.date.available	2012-06-12T06:09:34Z
dc.date.issued	2012-06
dc.description.abstract	Please read abstract in the article.	en_US
dc.description.librarian	nf2012	en
dc.description.uri	http://www.elsevier.com/locate/physb	en_US
dc.identifier.citation	P.N.M. Ngoepe, W.E. Meyer, M. Diale, F.D. Auret, L.van Schalkwyk, Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures, Physica B, vol. 407, no. 10, pp. 1628-1630 (2012), doi: 10.1016/j.physb.2011.09.102	en
dc.identifier.issn	0921-4526 (print)
dc.identifier.issn	1873-2135 (online)
dc.identifier.other	10.1016/j.physb.2011.09.102
dc.identifier.uri	http://hdl.handle.net/2263/19144
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	© 2011 Elsevier B.V. All rights reserved.	en_US
dc.subject	Annealing	en
dc.subject	Schottky photodiodes	en
dc.subject	AlGaN	en
dc.subject.lcsh	Photodiodes	en
dc.subject.lcsh	Optoelectronics	en
dc.title	Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures	en
dc.type	Postprint Article	en