Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures

Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Van Schalkwyk, Louwrens

We are excited to announce that the repository will soon undergo an upgrade, featuring a new look and feel along with several enhanced features to improve your experience. Please be on the lookout for further updates and announcements regarding the launch date. We appreciate your support and look forward to unveiling the improved platform soon.

Show simple item record

dc.contributor.author	Ngoepe, Phuti Ngako Mahloka
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Van Schalkwyk, Louwrens
dc.date.accessioned	2012-06-12T06:09:34Z
dc.date.available	2012-06-12T06:09:34Z
dc.date.issued	2012-06
dc.description.abstract	Please read abstract in the article.	en_US
dc.description.librarian	nf2012	en
dc.description.uri	http://www.elsevier.com/locate/physb	en_US
dc.identifier.citation	P.N.M. Ngoepe, W.E. Meyer, M. Diale, F.D. Auret, L.van Schalkwyk, Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures, Physica B, vol. 407, no. 10, pp. 1628-1630 (2012), doi: 10.1016/j.physb.2011.09.102	en
dc.identifier.issn	0921-4526 (print)
dc.identifier.issn	1873-2135 (online)
dc.identifier.other	10.1016/j.physb.2011.09.102
dc.identifier.uri	http://hdl.handle.net/2263/19144
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	© 2011 Elsevier B.V. All rights reserved.	en_US
dc.subject	Annealing	en
dc.subject	Schottky photodiodes	en
dc.subject	AlGaN	en
dc.subject.lcsh	Photodiodes	en
dc.subject.lcsh	Optoelectronics	en
dc.title	Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures	en
dc.type	Postprint Article	en