Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure

Nyamhereme, C.; Venter, Andre; Auret, Francois Danie; Coelho, Sergio M.M.; Murape, D.M.

dc.contributor.author	Nyamhereme, C.
dc.contributor.author	Venter, Andre
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Coelho, Sergio M.M.
dc.contributor.author	Murape, D.M.
dc.date.accessioned	2012-05-23T10:17:35Z
dc.date.available	2012-05-23T10:17:35Z
dc.date.issued	2012-02-29
dc.description.abstract	Bulk antimony (Sb) doped germanium (n-Ge) samples with doping concentrations ranging between 7.0 1014 cm 3 and 2.5 1015 cm 3 were exposed to a dc-hydrogen or helium plasma. Hydrogen exposure resulted in the introduction of a single prominent defect level at EC 0.31 eV. Exposing similar samples to He plasmas introduced the same electron trap. The trap concentration increased linearly with dopant concentration suggesting that Sb may be a component of this plasma-induced trap. Thermal annealing kinetics studies suggested that this defect anneals out by diffusion.	en
dc.description.librarian	nf2012	en
dc.description.uri	http://jap.aip.org/	en_US
dc.identifier.citation	Nyamhere, C, Venter, A, Auret, FD, Coelho, SMM & Murape, DM 2012, 'Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure', Journal of Applied Physics, vol. 111, no. 4, pp. 044511-1 - 044511-2.	en
dc.identifier.issn	0021-8979 (print)
dc.identifier.issn	1089-7550 (online)
dc.identifier.other	10.1063/1.3687426
dc.identifier.uri	http://hdl.handle.net/2263/18857
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.rights	© 2012 American Institute of Physics	en_US
dc.subject	E(0.31) defect	en
dc.subject	He plasma exposure	en
dc.title	Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure	en
dc.type	Article	en