Ar plasma induced deep levels in epitaxial n-GaAs

Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Janse van Rensburg, J.P.; Meyer, Walter Ernst; Coelho, Sergio M.M.; Kolkovsky, V.I.

dc.contributor.author	Venter, Andre
dc.contributor.author	Nyamhere, Cloud
dc.contributor.author	Botha, J.R.
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Janse van Rensburg, J.P.
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Coelho, Sergio M.M.
dc.contributor.author	Kolkovsky, V.I.
dc.date.accessioned	2012-03-13T06:13:08Z
dc.date.available	2012-03-13T06:13:08Z
dc.date.issued	2012-03-08
dc.description.abstract	Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (Ec - 0.04 eV, Ec - 0.07 eV, Ec - 0.19 eV, Ec - 0.31 eV, Ec - 0.53 eV, and Ec - 0.61 eV). The trap, Ec - 0.04 eV, labelled E10 and having a trap signature similar to irradiation induced defect E1, appears to be metastable. Ec - 0.31 eV and Ec - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.	en
dc.description.librarian	nf2012	en
dc.description.sponsorship	South African National Research Foundation	en_US
dc.description.uri	http://jap.aip.org/	en_US
dc.identifier.citation	Venter, A, Nyamhere, C, Botha, JR, Auret, FD, Van Rensburg, PJJ, Meyer, WE, Coelho, SMM & Kolkovsky, VI 2012, 'Ar plasma induced deep levels in epitaxial n-GaAs', Journal of Applied Physics, vol. 111, no. 013703, pp. 1-4.	en
dc.identifier.issn	0021-8979 (print)
dc.identifier.issn	1089-7550 (online)
dc.identifier.other	10.1063/1.3673322
dc.identifier.uri	http://hdl.handle.net/2263/18424
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.rights	© 2012 American Institute of Physics	en
dc.subject	Ar plasma etching	en
dc.subject	Epitaxial n-GaAs	en
dc.subject	Low energy ICP etching	en
dc.subject.lcsh	Plasma etching	en
dc.subject.lcsh	Epitaxy	en
dc.title	Ar plasma induced deep levels in epitaxial n-GaAs	en
dc.type	Article	en