Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

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dc.contributor.author Chawanda, Albert
dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Auret, Francois Danie
dc.contributor.author Mtangi, C.
dc.contributor.author Nyamhere, J.M.
dc.contributor.author Nel, Jacqueline Margot
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.date.accessioned 2012-02-09T06:14:31Z
dc.date.available 2012-02-09T06:14:31Z
dc.date.issued 2012-02
dc.description.abstract Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (100) was observed up to annealing temperature of 500oC. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (100) system occurs between 600-700oC. en
dc.description.librarian nf2012 en
dc.description.sponsorship This work has been made possible by financial assistance from the South African National Research Foundation. en_US
dc.description.uri http://www.elsevier.com/locate/jallcom en_US
dc.identifier.citation Chawanda, A, Coelho, SMM, Auret, FD, Mtangi, W, Nyamhere, C, Nel, JM & Daile, M 2012, 'Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)', Journal of Alloys and Compounds, vol. 513, no. 2, pp. 44-49. en
dc.identifier.issn 0925-8388 (print)
dc.identifier.issn 1873-4669 (online)
dc.identifier.other 10.1016/j.jallcom.2011.09.053
dc.identifier.uri http://hdl.handle.net/2263/18055
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights © 2011 Elsevier B.V. All rights reserved. en
dc.subject Schottky contacts en
dc.subject Annealing conditions en
dc.subject Electron beam deposition system en
dc.subject.lcsh Diodes, Schottky-barrier -- Heat treatment en
dc.subject.lcsh Germanium diodes en
dc.subject.lcsh Iridium -- Heat treatment en
dc.subject.lcsh Agglomeration en
dc.subject.lcsh Scanning electron microscopy en
dc.title Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) en
dc.type Postprint Article en


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