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Metal-semiconductor contact (2)
Plasma etching (2)
Rutherford backscattering spectrometry (2)
Semiconductor-metal boundaries (2)
Temperature measurements (2)
Zinc oxide (2)
ZnO (2)
Alpha-particle effects (1)
Alpha-particle irradiation (1)
Annealing of metals (1)
Ar plasma etching (1)
Calibration (1)
Capacitance meters (1)
Channelling (1)
Channelling geometry (1)
Characterization (1)
Compact streak camera (1)
Compressibility (1)
Crystal defects (1)
Crystal growth from solution (1)
Crystals (1)
Czochralski Si (1)
Diodes, Semiconductor (1)
DLTS (Spectroscopy) (1)
Dry etch (1)
e-Centers (1)
Electron beam effects (1)
Electron irradiation (1)
Electron mobility (1)
Electronic defects (1)
Electrons -- Diffraction (1)
Electrons -- Emission (1)
Femtoscopy (1)
Fermi liquid theory (1)
Gallium (1)
Gallium doping (1)
GaN (1)
Ge-Si alloys (1)
Gold films (1)
Heavy ions (1)
High resolution Laplace DLTS (1)
ICP (1)
Impurity distribution (1)
Interstitials (1)
Ions -- Defects (1)
Kalibrering (1)
L-DLTS (1)
Laplace (high-resolution) DLTS (1)
Lithium (1)
Metallization (1)
Metallizing (1)
N-type Ge (1)
Opto-elektroniese stelsel (1)
Optoelectronics (1)
Palladium (1)
Photodiodes (1)
Pulsed laser deposition (1)
Radiation damage (1)
Rare-earth (1)
RBS (1)
Schottky (1)
Secondary ion mass spectrometry (1)
Semiconductor growth (1)
Semiconductors (1)
Silicides (1)
Silicon (1)
Sputtering (Physics) (1)
Streak cameras (1)
Surface treatment (1)
Temperature dependence (1)
Thermionic emission (1)
Traps (1)
Ultraviolet sensitive photodiodes (1)
Ultraviolet-sensitiewe fotodiodes (1)
Valence bands (1)
X-ray diffraction (1)
Zinc compounds (1)