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Browsing Research Articles (Danie Auret Collection) by Subject "Barrier height"
Now showing items 1-5 of 5
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(Elsevier, 2010-07)Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been studied as a function of temperature. ...
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(Korean Physical Society, 2010-12)We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n- Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The ...
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(Elsevier, 2009)Read abstract in article.
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(Elsevier, 2011)We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density ...
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(Elsevier, 2009)Read abstract in article.
Now showing items 1-5 of 5