Browsing Research Articles (Danie Auret Collection) by Subject "Annealing"

Browsing Research Articles (Danie Auret Collection) by Subject "Annealing"

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  • Defect production in strained p-type Si1-xGex by Er implantation 
    Mamor, M.; Pipeleers, B.; Auret, Francois Danie; Vantomme, M. (American Institute of Physics, 2011-01)
    Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...
  • Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium 
    Auret, Francois Danie; Coelho, Sergio M.M.; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)
    Please read abstract in article.
  • Lithium and electrical properties of ZnO 
    Vines, L.; Monakhov, E.V.; Schifano, R.; Mtangi, Wilbert; Auret, Francois Danie; Svensson, B.G. (American Institute of Physics, 2010-03)
    Hydrothermally grown n-type ZnO samples have been investigated by deep level transient spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect (TDH) temperature, and secondary ion ...