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Research Articles (Danie Auret Collection)
Collection of articles published by Prof F.D. Auret.
Recent Submissions
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Van Schalkwyk, Louwrens; Meyer, Walter Ernst; Nel, Jacqueline Margot; Auret, Francois Danie
(Suid Afrikaanse Akademie vir Wetenskap & Kuns, 2011)
Spectral and electrical characteristion of ultraviolet (UV) sensitive photodiodes requires a
calibrated optoelectronic system. For spectral characteristion, the irradiance of the UV light
source, after the light passed ...
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Kassier, Gunther Horst; Haupt, K.; Erasmus, N.; Rohwer, E.G.; Von Bergmann, H.M.; Schwoerer, H.; Coelho, Sergio M.M.; Auret, Francois Danie
(American Institute of Physics (AIP), 2010-10)
We have developed a compact streak camera suitable for measuring the duration of highly charged
subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as
frequently used in ultrafast ...
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Chawanda, Albert; Nel, Jacqueline Margot; Auret, Francois Danie; Mtangi, Wilbert; Nyamhere, Cloud; Diale, M. (Mmantsae Moche); Leach, Lindsay Josephine
(Korean Physical Society, 2010-12)
We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n-
Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of
Ni on n-Ge (100). The ...
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Chawanda, Albert; Roro, K.T.; Auret, Francois Danie; Mtangi, Wilbert; Nyamhere, Cloud; Nel, Jacqueline Margot; Leach, Lindsay Josephine
(Elsevier, 2011)
We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density ...
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Mtangi, Wilbert; Janse van Rensburg, Pieter Johan; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Nyamhere, Cloud; Nel, Jacqueline Margot; Chawanda, Albert
(Elsevier, 2010-07)
Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the
60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been
studied as a function of temperature. ...
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Mamor, M.; Pipeleers, B.; Auret, Francois Danie; Vantomme, M.
(American Institute of Physics, 2011-01)
Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...
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Vines, L.; Monakhov, E.V.; Schifano, R.; Mtangi, Wilbert; Auret, Francois Danie; Svensson, B.G.
(American Institute of Physics, 2010-03)
Hydrothermally grown n-type ZnO samples have been investigated by deep level transient spectroscopy
(DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect
(TDH) temperature, and secondary ion ...
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Roro, K.T.; Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Coelho, Sergio M.M.
(Elsevier, 2009)
Read abstract in article.
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Diale, M. (Mmantsae Moche); Auret, Francois Danie
(Elsevier, 2009)
Read abstract in article.
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Nel, Jacqueline Margot; Chawanda, Albert; Auret, Francois Danie; Jordaan, W.; Odendaal, R.Q. (Quintin); Hayes, M.; Coelho, Sergio M.M.
(Elsevier, 2009)
Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600°C. These resulting thin films were then characterised using scanning electron microscopy ...
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Hayes, M.; Schroeter, A.; Wendler, E.; Wesch, W.; Auret, Francois Danie; Nel, Jacqueline Margot
(Elsevier, 2009)
Read abstract in article.
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Mtangi, Wilbert; Auret, Francois Danie; Nyamhere, Cloud; Janse van Rensburg, Pieter Johan; Chawanda, Albert; Diale, M. (Mmantsae Moche); Nel, Jacqueline Margot; Meyer, Walter Ernst
(Elsevier, 2009)
Read abstract in article.
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Coelho, Sergio M.M.; Auret, Francois Danie; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst
(Elsevier, 2009)
Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
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Auret, Francois Danie; Coelho, Sergio M.M.; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst
(Elsevier, 2009)
Please read abstract in article.
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Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan
(Elsevier, 2009)
Please read abstract in article
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Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Matias, V.S.; Vantomme, A.
(Elsevier, 2009)
Please read abstract in article
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Wendler, E.; Bilani, O.; Gartner, K.; Wesch, W.; Hayes, M.; Auret, Francois Danie; Lorenz, K.; Alves, E.
(Elsevier, 2009)
Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by ...
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Auret, Francois Danie; Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Nyamhere, Cloud; Meyer, Walter Ernst
(Elsevier, 2009)
We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
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Nyamhere, Cloud; Chawanda, Albert; Das, A.G.M.; Auret, Francois Danie; Hayes, M.
(Elsevier, 2007-12-15)
When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...
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Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Von Wenckstern, Holger; Schmidt, H.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, Marius
(Elsevier, 2007-12)
Please refer to abstract in article
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