Recently added

UP Experts (Danie Auret Collection): Recent submissions

  • Electrical characterization of vapor-phase-grown single-crystal ZnO 
    Auret, Francois Danie; Goodman, Stewart Alexander; Legodi, Matshisa Johannes; Meyer, Walter Ernst; Look, D.C. (American Institute of Physics, 2002-02-25)
    Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels ...
  • Electrical characterization of defects in heavy-ion implanted n-type Ge 
    Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Coelho, Sergio M.M.; Meyer, Walter Ernst; Decoster, S.; Matias, V.S.; Vantomme, A.; Smeets, D. (Elsevier, 2007-04)
    Please open article to read abstract
  • High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon 
    Auret, Francois Danie; Peaker, A.R.; Markevich, V.P.; Dobaczewski, L.; Gwilliam, R.M. (Elsevier, 2006-04)
    We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As. Four sets of samples ...
  • Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS 
    Nyamhere, Cloud; Deenapanray, P.N.K.; Auret, Francois Danie; Farlow, F.C. (Elsevier, 2006)
    We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient ...