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Browsing UP Experts (Danie Auret Collection) by Subject "Defects"

Now showing items 1-8 of 8

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Nyamhere, Cloud; Deenapanray, P.N.K.; Auret, Francois Danie; Farlow, F.C. (Elsevier, 2006)

We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient ...
Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan (Elsevier, 2009)

Please read abstract in article
Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium

Coelho, Sergio M.M.; Auret, Francois Danie; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)

Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
Electrical characterization of defects introduced during metallization processes in n-type germanium

Auret, Francois Danie; Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Nyamhere, Cloud; Meyer, Walter Ernst (Elsevier, 2009)

We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
Electrical characterization of rare-earth implanted GaN

Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Matias, V.S.; Vantomme, A. (Elsevier, 2009)

Please read abstract in article
Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

Auret, Francois Danie; Coelho, Sergio M.M.; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)

Please read abstract in article.
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Von Wenckstern, Holger; Schmidt, H.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, Marius (Elsevier, 2007-12)

Please refer to abstract in article
Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

Nyamhere, Cloud; Chawanda, Albert; Das, A.G.M.; Auret, Francois Danie; Hayes, M. (Elsevier, 2007-12-15)

When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...

Now showing items 1-8 of 8

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Browsing UP Experts (Danie Auret Collection) by Subject "Defects"

Browsing UP Experts (Danie Auret Collection) by Subject "Defects"

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