Mamor, M.; Pipeleers, B.; Auret, Francois Danie; Vantomme, M.
(American Institute of Physics, 2011-01)
Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...