Abstract:
Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively evaporated onto Ge (111) that was ICP etched at a rate of 60 Å per minute for three or ten minute intervals. Although plasma cleaning is known to introduce defects that were observed with DLTS, the diodes exhibited excellent current–voltage characteristics when cooled down to 80K. Current–temperature(IT) scans that were recorded from 20K up to 300K after cooling under reverse bias showed no effect of recombination/generation(RG). On the other hand, IT scans that were recorded after cooling under zero or forward bias clearly exhibited RG effects in the 100–240K temperature range. This effect was found to be completely reversible. In addition, ICP etching leads to superior devices when compared to devices manufactured by RF sputter deposition.
