Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
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Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Myburg, G.
;
Janse van Rensburg, Pieter Johan
;
Meyer, Walter Ernst
URI:
http://hdl.handle.net/2263/11683
Date:
2009
Abstract:
Please read abstract in article.
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This item appears in the following Collection(s)
Research Articles (Danie Auret Collection)
24
Research Articles (Physics)
718
Research Articles (University of Pretoria)
37878
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