Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

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dc.contributor.author Nyamhere, Cloud
dc.contributor.author Das, A.G.M.
dc.contributor.author Auret, Francois Danie
dc.contributor.author Chawanda, Albert
dc.contributor.author Mtangi, Wilbert
dc.contributor.author Odendaal, R.Q. (Quintin)
dc.contributor.author Carr, Alan
dc.date.accessioned 2009-10-28T06:11:58Z
dc.date.available 2009-10-28T06:11:58Z
dc.date.issued 2009
dc.description.abstract Please read abstract in article en_US
dc.identifier.citation C.Nyamhere, et al., Physica B (2009), doi:10.1016/j.physb.2009.09.037 en_US
dc.identifier.issn 0921-4526
dc.identifier.other 10.1016/j.physb.2009.09.037
dc.identifier.uri http://hdl.handle.net/2263/11608
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights Elsevier en_US
dc.subject Laplace DLTS en
dc.subject DLTS en
dc.subject Defects en
dc.subject.lcsh Deep level transient spectroscopy en
dc.subject.lcsh Laplace transformation en
dc.subject.lcsh Sputtering (Physics) en
dc.subject.lcsh Germanium en
dc.title Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) en_US
dc.type Postprint Article en_US


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