Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

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Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan
URI: http://hdl.handle.net/2263/11608
Date: 2009

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