Electrical characterization of rare-earth implanted GaN

Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Matias, V.S.; Vantomme, A.

dc.contributor.author	Janse van Rensburg, Pieter Johan
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Matias, V.S.
dc.contributor.author	Vantomme, A.
dc.date.accessioned	2009-10-28T06:11:40Z
dc.date.available	2009-10-28T06:11:40Z
dc.date.issued	2009
dc.description.abstract	Please read abstract in article	en_US
dc.description.abstract	Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium-(Eu) and xenon-(Xe) implanted GaN films on sapphire substrates. Implantation energy was 80keV with afluence of 1x1014cm-2 along a channeled crystallographic direction. Defect levels were observed at EC 0.19eV for both Eu- and Xe- implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22,0.68,0.49,0.60,0.77eV and 0.48,0.64,0.45, 0.72eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations.	en
dc.identifier.citation	P.J.JansevanRensburg,et al.,Physica B (2009),doi:10.1016/j.physb.2009.09.018	en_US
dc.identifier.issn	0921-4526
dc.identifier.other	10.1016/j.physb.2009.09.018
dc.identifier.uri	http://hdl.handle.net/2263/11607
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Elsevier	en_US
dc.subject	GaN	en
dc.subject	Implantation	en
dc.subject	Rare-earth	en
dc.subject	Defects	en
dc.subject.lcsh	Deep level transient spectroscopy	en
dc.title	Electrical characterization of rare-earth implanted GaN	en_US
dc.type	Postprint Article	en_US