Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing
- UPSpace Home
- →
- Natural and Agricultural Sciences
- →
- Physics
- →
- Research Articles (Physics)
- →
- View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
We are excited to announce that the repository will soon undergo an upgrade, featuring a new look and feel along with several enhanced features to improve your experience. Please be on the lookout for further updates and announcements regarding the launch date. We appreciate your support and look forward to unveiling the improved platform soon.
| dc.contributor.author | Mabelane, T.S.
|
|
| dc.contributor.author | Abdalla, Zaki Adam Yousif
|
|
| dc.contributor.author | Skuratov, V.A.
|
|
| dc.contributor.author | Ntshangase, S.S.
|
|
| dc.contributor.author | Masikane, S.C.
|
|
| dc.contributor.author | Hlatshwayo, Thulani Thokozani
|
|
| dc.date.accessioned | 2025-04-22T10:58:15Z | |
| dc.date.available | 2025-04-22T10:58:15Z | |
| dc.date.issued | 2025-05 | |
| dc.description | DATA AVAILABILITY : Data will be made available on request. | en_US |
| dc.description.abstract | Please read abstract in the article. | en_US |
| dc.description.department | Physics | en_US |
| dc.description.librarian | hj2025 | en_US |
| dc.description.sdg | SDG-07:Affordable and clean energy | en_US |
| dc.description.sponsorship | The National Research Foundation (NRF) of South Africa. | en_US |
| dc.description.uri | https://www.sciencedirect.com/journal/surfaces-and-interfaces | en_US |
| dc.identifier.citation | Mabelane, T.S., Abdalla, Z.A.Y., Skuratov, V.A. et al. 2025, 'Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing', Surfaces and Interfaces, vol. 64, art. 106376, pp. 1-11, doi : 10.1016/j.surfin.2025.106376. | en_US |
| dc.identifier.issn | 2468-0230 (online) | |
| dc.identifier.other | 10.1016/j.surfin.2025.106376 | |
| dc.identifier.uri | http://hdl.handle.net/2263/102175 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2025 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY-NC license (http://creativecommons.org/licenses/by- nc/4.0/). | en_US |
| dc.subject | Swift heavy ion (SHI) | en_US |
| dc.subject | Silicon carbide (SiC) | en_US |
| dc.subject | Selenium | en_US |
| dc.subject | Annealing | en_US |
| dc.subject | Recrystallization | en_US |
| dc.subject | SDG-07: Affordable and clean energy | en_US |
| dc.title | Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing | en_US |
| dc.type | Article | en_US |
