Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing

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Effect of exposing Se pre-implanted polycrystalline SiC to maximum electronic energy loss of 33.7 keV/nm and annealing

Mabelane, T.S.; Abdalla, Zaki Adam Yousif; Skuratov, V.A.; Ntshangase, S.S.; Masikane, S.C.; Hlatshwayo, Thulani Thokozani
URI: http://hdl.handle.net/2263/102175
Date: 2025-05

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DATA AVAILABILITY : Data will be made available on request.

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