DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide

Omotoso, Ezekiel; Igumbor, Emmanuel; Meyer, Walter Ernst

dc.contributor.author	Omotoso, Ezekiel
dc.contributor.author	Igumbor, Emmanuel
dc.contributor.author	Meyer, Walter Ernst
dc.date.accessioned	2025-03-11T07:52:10Z
dc.date.available	2025-03-11T07:52:10Z
dc.date.issued	2025-01
dc.description	DATA AVAILABILITY : The datasets generated during and/or analysed during the current study are available from the author on reasonable request.	en_US
dc.description.abstract	Please read abstract in the article.	en_US
dc.description.department	Physics	en_US
dc.description.librarian	hj2024	en_US
dc.description.sdg	SDG-09: Industry, innovation and infrastructure	en_US
dc.description.sponsorship	Open access funding provided by University of Pretoria.	en_US
dc.description.uri	https://link.springer.com/journal/10854	en_US
dc.identifier.citation	Omotoso, E., Igumbor, E. & Meyer, W.E. DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide. Journal of Materials Science: Materials in Electronics 36, 3 (2025). https://doi.org/10.1007/s10854-024-14060-8.	en_US
dc.identifier.issn	0957-4522 (print)
dc.identifier.issn	1573-482X (online)
dc.identifier.other	10.1007/s10854-024-14060-8
dc.identifier.uri	http://hdl.handle.net/2263/101440
dc.language.iso	en	en_US
dc.publisher	Springer	en_US
dc.rights	© The Author(s), 2024. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License.	en_US
dc.subject	Deep level transient spectroscopy (DLTS)	en_US
dc.subject	Schottky barrier diodes (SBDs)	en_US
dc.subject	Nitrogen-doped 4H-silicon carbide	en_US
dc.subject	Swift heavy ions	en_US
dc.subject	Electronic devices	en_US
dc.subject	SDG-09: Industry, innovation and infrastructure	en_US
dc.title	DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide	en_US
dc.type	Article	en_US