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Browsing Research Articles (Physics) by UP Author "Auret, Francois Danie"
Now showing items 1-20 of 84
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Mtangi, Wilbert; Janse van Rensburg, Pieter Johan; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Nyamhere, Cloud; Nel, Jacqueline Margot; Chawanda, Albert (Elsevier, 2010-07)Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been studied as a function of temperature. ...
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Mayimele, Meeheketo Advice; Auret, Francois Danie; Janse van Rensburg, J.P.; Diale, M. (Mmantsae Moche) (Elsevier, 2016-01)We report on the analysis of current voltage (I-V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80-320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I-V ...
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Mtangi, Wilbert; Nel, J.M.; Auret, Francois Danie; Chawanda, Albert; Nyamhere, Cloud; Diale, M. (Mmantsae Moche) (Elsevier, 2012-10)We report on the studies carried out on hydrogen peroxide treated melt grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8 ± ...
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Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Janse van Rensburg, J.P.; Meyer, Walter Ernst; Coelho, Sergio M.M.; Kolkovsky, V.I. (American Institute of Physics, 2012-03-08)Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (Ec - 0.04 eV, Ec - 0.07 eV, Ec - 0.19 eV, Ec - 0.31 eV, Ec - 0.53 eV, and Ec - 0.61 eV). The trap, Ec - 0.04 eV, labelled E10 and having a ...
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Gora, Valentine Elifas; Auret, Francois Danie; Danga, Helga Tariro; Tunhuma, Shandirai Malven; Nyamhere, Cloud; Igumbor, Emmanuel; Chawanda, Albert (Elsevier, 2019-08)Please read abstract in the article.
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Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Auret, Francois Danie; Omotoso, Ezekiel; Hlatshwayo, Thulani Thokozani; Diale, M. (Mmantsae Moche) (Elsevier, 2018-04)Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10–11 ...
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Van Schalkwyk, Louwrens; Meyer, Walter Ernst; Auret, Francois Danie; Nel, Jacqueline Margot; Ngoepe, Phuti Ngako Mahloka; Diale, M. (Mmantsae Moche) (Elsevier, 2012-05)Intrinsically solar-blind ultraviolet (UV) AlGaN-based Schottky photodiodes were fabricated using Iridium oxide (IrO2) as the Schottky barrier material. The Ir Schottky contacts were annealed at 700 °C under O2 ambient and ...
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Nyamhere, Cloud; Deenapanray, P.N.K.; Auret, Francois Danie; Farlow, F.C. (Elsevier, 2006)We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient ...
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Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan (Elsevier, 2009)Please read abstract in article
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Nyamhereme, C.; Venter, Andre; Auret, Francois Danie; Coelho, Sergio M.M.; Murape, D.M. (American Institute of Physics, 2012-02-29)Bulk antimony (Sb) doped germanium (n-Ge) samples with doping concentrations ranging between 7.0 1014 cm 3 and 2.5 1015 cm 3 were exposed to a dc-hydrogen or helium plasma. Hydrogen exposure resulted in the introduction ...
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Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Auret, Francois Danie; Omotoso, Ezekiel; Diale, M. (Mmantsae Moche); Swart, H.C.; Duvenhage, M.M.; Coetsee, E. (Elsevier, 2016-01)The evolution of Ni/Au and Ni/Ir/Au metal contacts deposited on AlGaN was investigated at different annealing temperatures. The samples were studied with electrical and chemical composition techniques. I-V characteristics ...
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Kassier, Gunther Horst; Haupt, K.; Erasmus, N.; Rohwer, E.G.; Von Bergmann, H.M.; Schwoerer, H.; Coelho, Sergio M.M.; Auret, Francois Danie (American Institute of Physics (AIP), 2010-10)We have developed a compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as frequently used in ultrafast ...
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Mtangi, Wilbert; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Coelho, Sergio M.M.; Legodi, Matshisa Johannes; Meyer, Walter Ernst; Chawanda, Albert (American Institute of Physics, 2011-11)A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and ...
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Gora, V.E.; Chawanda, A.; Nyamhere, C.; Auret, Francois Danie; Mazunga, F.; Jaure, T.; Chibaya, B.; Omotoso, Ezekiel; Danga, Helga Tariro; Tunhuma, Shandirai Malven (Elsevier, 2018-04)We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300–800 K temperature range. Results extracted from I-V ...
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Pienaar, J.; Meyer, Walter Ernst; Auret, Francois Danie; Coelho, Sergio M.M. (Elsevier, 2012-05)Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced through low energy (±80 eV) inductively coupled plasma (ICP) ...
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Chawanda, Albert; Nel, Jacqueline Margot; Auret, Francois Danie; Mtangi, Wilbert; Nyamhere, Cloud; Diale, M. (Mmantsae Moche); Leach, Lindsay Josephine (Korean Physical Society, 2010-12)We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n- Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The ...
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Chawanda, Albert; Mtangi, Wilbert; Auret, Francois Danie; Nel, Jacqueline Margot; Nyamhere, Cloud; Diale, M. (Mmantsae Moche) (Elsevier, 2012-05)The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 ...
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Coelho, Sergio M.M.; Auret, Francois Danie; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
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Hayes, M.; Schroeter, A.; Wendler, E.; Wesch, W.; Auret, Francois Danie; Nel, Jacqueline Margot (Elsevier, 2009)Read abstract in article.
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Nyamhere, Cloud; Venter, Andre; Murape, D.M.; Auret, Francois Danie; Coelho, Sergio M.M.; Botha, J.R. (Elsevier, 2012-08)Bulk antimony doped germanium (n-Ge) has been exposed to a dc-hydrogen plasma. Capacitance-voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by ˜ a 1.5 orders of magnitude ...
Now showing items 1-20 of 84