Selyshchev, Pavel; Akintunde, S.O. (Samuel)(World Academy of Science, Engineering and Technology, 2014)
A theoretical approach to consider formation of
chemical compound layer at the interface between initial substances
A and B due to the interfacial interaction and diffusion is developed.
It is considered situation when ...
A theoretical approach is developed that describes the formation of a thin-film of AB-compound layer under the
influence of radiation-induced vacancy. The AB-compound layer is formed as a result of a chemical reaction ...
A theoretical approach is developed which describes the growth kinetics of thin films of near noble metal silicide (especially of cobalt silicide (Co2Si) and nickel silicide (Ni2Si)) and refractory metal silicide (particularly ...
