Van Schalkwyk, Louwrens; Meyer, W.E. (Walter Ernst); Nel, Jackie M. (Jacqueline Margot); Auret, F.D. (Francois Danie)(Suid Afrikaanse Akademie vir Wetenskap & Kuns, 2011)
Spectral and electrical characteristion of ultraviolet (UV) sensitive photodiodes requires a
calibrated optoelectronic system. For spectral characteristion, the irradiance of the UV light
source, after the light passed ...
Kassier, G.H. (Gunther Horst); Haupt, K.; Erasmus, N.; Rohwer, E.G.; Von Bergmann, H.M.; Schwoerer, H.; Coelho, S.M.M.; Auret, F.D. (Francois Danie)(American Institute of Physics (AIP), 2010-10)
We have developed a compact streak camera suitable for measuring the duration of highly charged
subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as
frequently used in ultrafast ...
We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n-
Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of
Ni on n-Ge (100). The ...
We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density ...
Mtangi, Wilbert; Janse van Rensburg, P.J.; Diale, M. (Mmantsae Moche); Auret, F.D. (Francois Danie); Nyamhere, Cloud; Nel, Jackie M. (Jacqueline Margot); Chawanda, Albert(Elsevier, 2010-07)
Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the
60-320 K temperature range. The zero bias barrier height, bo and ideality factor, n have been
studied as a function of temperature. ...