• Kalibrering van 'n opto-elektroniese stelsel vir die karakterisering van ultraviolet-sensitiewe fotodiodes 

  Van Schalkwyk, Louwrens; Meyer, Walter Ernst; Nel, Jacqueline Margot; Auret, Francois Danie (Suid Afrikaanse Akademie vir Wetenskap & Kuns, 2011)

  Spectral and electrical characteristion of ultraviolet (UV) sensitive photodiodes requires a calibrated optoelectronic system. For spectral characteristion, the irradiance of the UV light source, after the light passed ...
• A compact streak camera for 150 fs time resolved measurement of bright pulses in ultrafast electron diffraction 

  Kassier, Gunther Horst; Haupt, K.; Erasmus, N.; Rohwer, E.G.; Von Bergmann, H.M.; Schwoerer, H.; Coelho, Sergio M.M.; Auret, Francois Danie (American Institute of Physics (AIP), 2010-10)

  We have developed a compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as frequently used in ultrafast ...
• Correlation between barrier heights and ideality factors of Ni/n-Ge (100) schottky barrier diodes 

  Chawanda, Albert; Nel, Jacqueline Margot; Auret, Francois Danie; Mtangi, Wilbert; Nyamhere, Cloud; Diale, M. (Mmantsae Moche); Leach, Lindsay Josephine (Korean Physical Society, 2010-12)

  We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n- Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The ...
• Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1) 

  Chawanda, Albert; Roro, K.T.; Auret, Francois Danie; Mtangi, Wilbert; Nyamhere, Cloud; Nel, Jacqueline Margot; Leach, Lindsay Josephine (Elsevier, 2011)

  We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density ...
• Analysis of current voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range 

  Mtangi, Wilbert; Janse van Rensburg, Pieter Johan; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Nyamhere, Cloud; Nel, Jacqueline Margot; Chawanda, Albert (Elsevier, 2010-07)

  Current-voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60-320 K temperature range. The zero bias barrier height, bo  and ideality factor, n have been studied as a function of temperature. ...
• Defect production in strained p-type Si1-xGex by Er implantation 

  Mamor, M.; Pipeleers, B.; Auret, Francois Danie; Vantomme, M. (American Institute of Physics, 2011-01)

  Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...
• Lithium and electrical properties of ZnO 

  Vines, L.; Monakhov, E.V.; Schifano, R.; Mtangi, Wilbert; Auret, Francois Danie; Svensson, B.G. (American Institute of Physics, 2010-03)

  Hydrothermally grown n-type ZnO samples have been investigated by deep level transient spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect (TDH) temperature, and secondary ion ...
• Effect of alpha-particle irradiation on the electrical properties of n-type Ge 

  Roro, K.T.; Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Coelho, Sergio M.M. (Elsevier, 2009)

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• Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes 

  Diale, M. (Mmantsae Moche); Auret, Francois Danie (Elsevier, 2009)

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• Microstructural and surface characterization of thin gold films on n-Ge (111) 

  Nel, Jacqueline Margot; Chawanda, Albert; Auret, Francois Danie; Jordaan, W.; Odendaal, R.Q. (Quintin); Hayes, M.; Coelho, Sergio M.M. (Elsevier, 2009)

  Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600°C. These resulting thin films were then characterised using scanning electron microscopy ...
• Damage formation in Ge during Ar+ and He+ implantation at 15 K 

  Hayes, M.; Schroeter, A.; Wendler, E.; Wesch, W.; Auret, Francois Danie; Nel, Jacqueline Margot (Elsevier, 2009)

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• The dependence of barrier height on temperature for Pd Schottky contacts on ZnO 

  Mtangi, Wilbert; Auret, Francois Danie; Nyamhere, Cloud; Janse van Rensburg, Pieter Johan; Chawanda, Albert; Diale, M. (Mmantsae Moche); Nel, Jacqueline Margot; Meyer, Walter Ernst (Elsevier, 2009)

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• Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium 

  Coelho, Sergio M.M.; Auret, Francois Danie; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)

  Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
• Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium 

  Auret, Francois Danie; Coelho, Sergio M.M.; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)

  Please read abstract in article.
• Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) 

  Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan (Elsevier, 2009)

  Please read abstract in article
• Electrical characterization of rare-earth implanted GaN 

  Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Matias, V.S.; Vantomme, A. (Elsevier, 2009)

  Please read abstract in article
• Radiation damage in ZnO ion implanted at 15 K 

  Wendler, E.; Bilani, O.; Gartner, K.; Wesch, W.; Hayes, M.; Auret, Francois Danie; Lorenz, K.; Alves, E. (Elsevier, 2009)

  Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by ...
• Electrical characterization of defects introduced during metallization processes in n-type germanium 

  Auret, Francois Danie; Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Nyamhere, Cloud; Meyer, Walter Ernst (Elsevier, 2009)

  We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
• Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition 

  Nyamhere, Cloud; Chawanda, Albert; Das, A.G.M.; Auret, Francois Danie; Hayes, M. (Elsevier, 2007-12-15)

  When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...
• Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band 

  Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Von Wenckstern, Holger; Schmidt, H.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, Marius (Elsevier, 2007-12)

  Please refer to abstract in article

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