Abstract:
Deep level transient spectroscopy (DLTS) was used to characterize the defects
introduced in n-type, N-doped, 4H-SiC while being exposed to electron beam evaporation
conditions. This was done by heating a tungsten source using an electron beam current of 100 mA,
which was not sufficient to evaporate tungsten. Two new defects were introduced during the
exposure of 4H-SiC samples to electron beam deposition conditions (without metal deposition) after
resistively evaporated nickel Schottky contacts. We established the identity of these defects by
comparing their signatures to those of high energy particle irradiation induced defects of the same
materials. The defect E0.42 had acceptor-like behaviour and could be attributed to be a silicon or
carbon vacancy. The E0.71 had intrinsic nature and was linked to a carbon vacancy and/or carbon
interstials.
