The fine structure of electron irradiation induced EL2-like defects in n-GaAs

Tunhuma, Shandirai Malven; Auret, Francois Danie; Legodi, Matshisa Johannes; Diale, M. (Mmantsae Moche)

dc.contributor.author	Tunhuma, Shandirai Malven
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Legodi, Matshisa Johannes
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.date.accessioned	2016-06-09T07:25:50Z
dc.date.available	2016-06-09T07:25:50Z
dc.date.issued	2016
dc.description.abstract	Defects induced by electron irradiation in n-GaAs have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS). The E0.83 (EL2) is the only defect observed prior to irradiation. Ru/n-GaAs Schottky diodes were irradiated with high energy electrons from a Sr-90 radionuclide up to a fluence of 2.45 1013 cm 2. The prominent electron irradiation induced defects, E0.04, E0.14, E0.38, and E0.63, were observed together with the metastable E0.17. Using L-DLTS, we observed the fine structure of a broad base EL2-like defect peak. This was found to be made up of the E0.75, E0.83, and E0.85 defects. Our study reveals that high energy electron irradiation increases the concentration of the E0.83 defect and introduces a family of defects with electronic properties similar to those of the EL2.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.librarian	am2016	en_ZA
dc.description.sponsorship	The authors gratefully acknowledge the financial support of the South African National Research Foundation (NRF) and the University of Pretoria.	en_ZA
dc.description.sponsorship	The South African National Research Foundation (NRF) and the University of Pretoria.	en_ZA
dc.description.uri	http://scitation.aip.org/content/aip/journal/jap	en_ZA
dc.identifier.citation	Tunhuma, SM, Auret, FD, Legodi, MJ & Diale, M 2015, 'The fine structure of electron irradiation induced EL2-like defects in n -GaAs', Journal of Applied Physics, vol. 119, no. 1, art. no. 145705, pp. 1-5.	en_ZA
dc.identifier.issn	0021-8979 (print)
dc.identifier.issn	1089-7550 (online)
dc.identifier.other	10.1063/1.4945774
dc.identifier.uri	http://hdl.handle.net/2263/52918
dc.language.iso	en	en_ZA
dc.publisher	American Institute of Physics	en_ZA
dc.rights	© 2016 AIP Publishing LLC	en_ZA
dc.subject	Electron irradiation	en_ZA
dc.subject	n-GaAs	en_ZA
dc.subject	Defects	en_ZA
dc.subject	Deep level transient spectroscopy (DLTS)	en_ZA
dc.subject	Laplace deep level transient spectroscopy (L-DLTS)	en_ZA
dc.title	The fine structure of electron irradiation induced EL2-like defects in n-GaAs	en_ZA
dc.type	Article	en_ZA