dc.contributor.author |
Friedland, Erich Karl Helmuth
|
|
dc.contributor.author |
Hlatshwayo, Thulani Thokozani
|
|
dc.contributor.author |
Van der Berg, Nic (Nicolaas George)
|
|
dc.date.accessioned |
2014-05-22T13:23:00Z |
|
dc.date.available |
2014-05-22T13:23:00Z |
|
dc.date.issued |
2013 |
|
dc.description.abstract |
The influence of irradiation induced damage on the transport of implanted species in poly and single crystalline
silicon carbide is investigated. For this purpose published diffusion results of strontium, silver, iodine
and cesium are compared with the associated evolution of defect profiles determined by α-particle channelling
in a backscattering geometry. Strong diffusion takes place in the amorphized surface layer of room
temperature implanted 6H-SiC during annealing at 1100 °C, which drops below the detection limit of 10-21
m2 s-1 as soon as re-crystallization is completed. Diffusion in samples implanted above the critical amorphization
temperature is only observed when simultaneously a significant reduction of defect density occurs.
No diffusion into the undamaged bulk is detected at temperatures up to 1500 °C. The observed diffusion behaviour
is explained by a defect related trapping and release mechanism. Normal grain boundary diffusion
of silver and iodine occurs in CVD-SiC. |
en_US |
dc.description.librarian |
hb2014 |
en_US |
dc.description.sponsorship |
National Research Foundation and the Bundesministerium für Bildung und Forschung |
en_US |
dc.description.uri |
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1610-1642a |
en_US |
dc.identifier.citation |
Friedland, EKH, Hlatshwayo, TT & Van der Berg, NG 2013, 'Influence of radiation damage on diffusion of fission products in silicon carbide', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 10, no. 2, pp. 208-215. |
en_US |
dc.identifier.issn |
1862-6351 (print) |
|
dc.identifier.issn |
1610-1642 (online) |
|
dc.identifier.other |
10.1002/pssc.201200457 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/39874 |
|
dc.language.iso |
en |
en_US |
dc.publisher |
Wiley-Blackwell |
en_US |
dc.rights |
© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the pre-peer reviewed version of the following article : Physica Status Solidi. C : Current Topics in Solid State Physics, vol. 10, no. 2, pp. 208-215, 2013. doi : 10.1002/pssc.201200457 which has been published in final form at : http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1610-1642a |
en_US |
dc.subject |
Silicon carbide |
en_US |
dc.subject |
Fission products |
en_US |
dc.subject |
Diffusion |
en_US |
dc.subject |
Radiation damage |
en_US |
dc.title |
Influence of radiation damage on diffusion of fission products in silicon carbide |
en_US |
dc.type |
Postprint Article |
en_US |