Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes

Diale, M. (Mmantsae Moche); Auret, Francois Danie

dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.contributor.author	Auret, Francois Danie
dc.date.accessioned	2009-11-11T06:14:07Z
dc.date.available	2009-11-11T06:14:07Z
dc.date.issued	2009
dc.description.abstract	Read abstract in article.	en_US
dc.identifier.citation	M. Diale, F.D. Auret, Physica B (2009), doi:10.1016/j.physb.2009.09.039	en_US
dc.identifier.issn	0921-4526
dc.identifier.other	10.1016/j.physb.2009.09.039
dc.identifier.uri	http://hdl.handle.net/2263/11801
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Elsevier	en_US
dc.subject	Surface treatment	en
dc.subject	Schottky contacts	en
dc.subject	Barrier height	en
dc.subject.lcsh	Diodes, Schottky-barrier	en
dc.title	Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes	en_US
dc.type	Postprint Article	en_US